Abstract
Wide-area and thick titanium nitride (TiN x ) films were prepared on Al 2O 3 substrate by laser chemical vapor deposition (LCVD) using tetrakis (diethylamido) titanium (TDEAT) and ammonia (NH 3) as source materials. Effects of laser power ( P L) and pre-heating temperature ( T pre) on the composition, microstructure and deposition rate of TiN x films were investigated. (111) and (200) oriented TiN x films in a single phase were obtained. The lattice parameter and N to Ti ratio of the TiN x films slightly increased with increasing P L and was close to stoichiometric at P L > 150 W. TiN x films had a cauliflower-like surface and columnar cross section. The deposition rate of TiN x films increased from 42 to 90 µm/h at a depositing area of 10 mm by 10 mm substrate, decreasing with increasing P L and T pre. The highest volume deposition rate of TiN x films was about 10 2 to 10 5 times greater than those of previous LCVD using Nd:YAG laser, argon ion laser and excimer laser.
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