Abstract
Zn1−xMnxSe epilayers have been grown on GaAs (100) substrates by hot-wall epitaxy. The structure of the epilayers was found to be zinc-blende over a large Mn composition range, 0⩽x⩽0.75. Exciton-related near-edge emissions and the intra-Mn2+ transition were observed in the 5 K photoluminescence (PL) spectrum. The composition dependence of PL peak energy was also studied. The ZnSe-like longitudinal optical phonon peak was observed in the Raman scattering spectrum and the Raman frequency was blueshifted with increasing Mn composition. The variation of the dielectric constants e1 and e2 as a function of Mn composition x was measured by spectroscopic ellipsometry in the 3.0–8.5 eV range at 300 K. The dielectric function spectra reveal distinct structures at each critical point.
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