New cubic Cd1−xMnxS epilayers grown on GaAs (100) substrates by hot-wall epitaxy

Abstract

The new cubic Cd1−xMnxS/GaAs(100) epilayers were grown by hot-wall epitaxy, and their structural and optical properties were investigated by x-ray diffraction (XRD) and photoluminescence (PL). The cubic structure spectra of the Cd1−xMnxS epilayers were only observed in the Mn composition range of 0.000≤x≤0.050 from the XRD spectra and the x-ray ϕ-scan curves. The lattice constants of the Cd1−xMnxS epilayers decreased linearly with increasing Mn composition and were consistent with Vegard’s law. The Cd1−xMnxS epilayers from x-ray reciprocal space mapping were found to be in a partially biaxial compressive strain state. In the cubic Cd1−xMnxS epilayers, only yellow emission PL peaks at around 2.0 eV without other peaks such as the appreciable near-edge emission peak and self-activated peak were observed.