Abstract
Ferroelectric thin films of PZT [Pb(Zr,Ti)O3] were deposited on platinum coated silicon and bare silicon by excimer laser (248 nm) ablation and were in situ crystallized, with and without an oxygen discharge. Films deposited at various oxygen discharge voltages exhibited variations in polarization switching, dielectric constant, and loss, and current-voltage (I-V) characteristics. Crystalline perovskite PZT films deposited with a discharge voltage of +300 V offered stoichiometric and crystalline films, with a dielectric constant of 850, a remnant polarization of 22 μC/cm2, and a coercive field of 40 kV/cm, a resistivity of about 1012 Ω cm and a charge storage density of as high as 100 fC/μm2 at 5 V. Besides the property enhancement, the presence of O2+ discharge plasma appeared to have reduced the deposition temperature to relatively lower values (500 °C).
Published Version
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