Abstract
The effect of PbO on Nb‐doped TiO2 varistors was investigated. It was found that the PbO dopant had significant effect on the varistor properties of Nb‐doped TiO2 ceramics. There existed an optimal range of PbO starting from 0.25 to 1 mol% for the nonlinear I–V characteristics of the 0.25 at.% Nb‐doped TiO2 ceramics. Within this PbO range, an effective boundary energy barrier of about 0.70 eV was created which yielded nonlinear I–V characteristics with α= 7.6. In contrast, α values of the samples containing PbO dopant outside this optimal range are only about 2 to 3. The effect of PbO on TiO2 varistors was analyzed by impedance spectroscopy, C–V and dielectric measurements, and X‐ray diffraction, as well as scanning electron microscopy. The results are discussed in the text.
Published Version
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