Abstract
The electron irradiation effect on hydrogen sensitivity of the sensors based on metal-insulator-semiconductor transistor (MISFET) element with structure Pd-Ta2O5-SiO2-Si have been investigated. The MISFET threshold voltage as a function of hydrogen concentration was determined before and after each irradiation. It is found that under irradiation this function was monotonically drifting. In addition after irradiations by doses more than ∼ 700Gy the hydrogen sensitivity are steadily decreasing. The models of hydrogen and radiation sensitivity were developed. According to represented models the estimations of critical doses and the forecast of hydrogen sensor performance under irradiation have been done.
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