Abstract
The electron irradiation effect on characteristics of the hydrogen sensors based on metal-insulator-semiconductor transistor structures has been investigated by experiment. The models of hydrogen and radiation sensitivity were developed. Using these models the forecast of functional performance of the hydrogen sensors under ionizing radiation and the estimation of critical doses has been done.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
