Abstract
Effects of ion-induced defects and oxygen concentration in annealing atmosphere on the formation of the buried oxide (BOX) layer in two-step implanted separation-by-implantation-of-oxygen (SIMOX) materials were investigated. It was found that the extra defects from the second-step oxygen implantation in the damage area promote the diffusion of oxygen in the annealing process. A thicker BOX layer can be obtained by increasing the concentration of oxygen in the annealing atmosphere after defect-induced by the oxygen implantation, which does not need longer annealing time compared to the normal annealing process. The formation mechanism of the BOX layer was discussed. Thus, the fabrication of the BOX layer in SIMOX material can be controlled by intentionally inducing the defects.
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