Abstract
Ultrathin buried oxide (BOX) layers have been synthesized by low-dose and low-energy separation by implantation of oxygen (SIMOX) technique. The formed BOX layers were examined by transmission electron microscopy (TEM) and the results demonstrated that the BOX layers are of high integrity without any detectable silicon islands therein. A modified method was introduced to measure the thermal conductivity of the synthesized high-integrity BOX layers with different thicknesses. It is found that ultrathin SIMOX BOX layers exhibit a thermal conductivity of ∼0.92 Wm-1K-1, which is approximately 34% lower than that of bulk SiO2, 1.4 Wm-1K-1. In addition, the boundary thermal resistance of the Si/BOX interfaces was also measured.
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