Abstract
We investigate the effect of internal electric field in InGaN well layer of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) on efficiency droop behavior. The simulation results show that the internal electric field in InGaN well layers of Ga-polar LEDs is same as the direction of external electric field by forward bias voltage, resulting in a strong efficiency droop. However, N-polar LEDs show that the efficiency droop is drastically improved due to an increase of internal quantum efficiency and carrier injection efficiency by weakening the internal electric field with increasing the forward bias voltage and decrease of electron overflow.
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