Influence of Internal Electric Field on the Spectral Characteristics of Blue GaN-Based Superluminescent Light-Emitting Diodes

Abstract

The effects of internal electric field on the spectral characteristics of InxGa1−xN/GaN superluminescent light-emitting diodes are studied theoretically. The Schrodinger and Poisson equations and the rate and optical propagating equations are solved in the presence of the internal electric field. By increasing the indium mole fraction in the quantum well, the internal electric field increases linearly. The injection current affects the intensity, bandwidth and wavelength of the spectrum. The results show that the internal electric field shifts the spectral radiations to the red region. Also, in the presence of internal electric field, the peak intensity of spectra increases, and the optical gain reduces.