Abstract
The instability of amorphous SiInZnO thin-film transistor with different active layer thickness under temperature stress has been investigated using the density of states extracted directly from capacitance-voltage characteristics. Interestingly, it is found that the instability under temperature stress is inversely proportional to the magnitude of interfacial trap density not the total trap density. This was observed from the decrease of the falling rate of activation energy as increasing interfacial trap density. Therefore, the interfacial trap plays a very important role as a key origin for the negative threshold voltage shift under temperature stress in SiInZnO thin-film transistors.
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