Abstract
Chemistimilated thermal oxidation of gallium arsenide was studied using Sb2O3 activator oxide in compositions with Ga2O3, Al2O3, and Y2O3 inert components. For Sb2O3-Y2O3 compositions, the thickness of the resulting oxide layer on GaAs was found to be a linear function of composition over the enter range of the compositions. For antimony oxide compositions with Ga2O3 and Al2O3 inert components, nonadditivities were observed near the component ordinates. For the Sb2O3-Ga2O3 system, the chemistimulating efficiency noticeably weakened at low concentrations of the inert component. The linear trend observed for this system within 0–60 mol % Sb2O3 is additively determined by the oxide layer thickness on GaAs in the presence of Sb2O3 and in the absence of activator. In the presence of inert Al2O3, the chemistimulating effect was enhanced near the Al2O3 ordinate and the resulting function was nonadditive with respect to the thicknesses reached in the presence of the individual components.
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