Abstract
We investigated the behavior of Zn and Si dopants in InP selective-area metalorganic vapor phase epitaxy using dimethylzinc, silane and disilane. The high incorporation efficiency in disilane doping induced lateral vapor phase diffusion of the dopant species from the mask region to the unmasked region, whereas the low incorporation efficiency in dimethylzinc and silane dopings induced no vapor phase diffusion. This lack of lateral diffusion for silane doping reduced the Si dopant concentration in the region where the growth rate was enhanced by the mask-patterning. The lateral diffusion in disilane doping and the independence of the Zn dopant concentration on the growth rate resulted in a uniform in-plane dopant concentration in the epilayers.
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