Abstract
The selective area metal–organic vapor phase epitaxy (SA-MOVPE) of InN was realized and its kinetics was investigated. InN deposition selectivity between the mask and the crystal surface was found to strongly depend on the growth temperature, and good selectivity was obtained above 600 °C. Under this growth condition, the thickness profile of InN between the masks exhibited a catenary shape, which resulted from the vapor phase diffusion. This fact shows that vapor phase diffusion is the dominant supply mechanism in InN SA-MOVPE as well as for the growth of GaN and InGaAsP. These kinetic analysis will contribute to the development of monolithically integrated AlInGaN-based devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
