GaN Selective Area Metal–Organic Vapor Phase Epitaxy: Prediction of Growth Rate Enhancement by Vapor Phase Diffusion Model

Abstract

Thickness profiles of GaN grown by selective area metal–organic vapor phase epitaxy (SA-MOVPE) were successfully reproduced by a vapor phase diffusion model that employs only one parameter–effective diffusion length D/ks. The value of D/ks of Ga-containing precursors changes from 10 to 50 µm under growth temperature of 1000–1250 °C and reactor total pressure of 100 mbar. It was confirmed that, in the wide-stripe SA-MOVPE of GaN, the vapor phase diffusion of Ga-containing precursors govern the profile of growth rate. Numerical simulation using the vapor phase diffusion model is of great help for the design and control of thickness profiles in the SA-MOVPE of GaN.