Effect of In and Zn Content on Structural and Electrical Properties of InZnSnO Thin-Film Transistors Using an Yb2TiO5Gate Dielectric

Abstract

In this paper, we investigated the effect of In and Zn content on the structural properties and electrical characteristics of amorphous indium–zinc–tin oxide ( $\alpha $ -InZnSnO) thin-film transistors (TFTs) featuring an Yb2TiO5 gate dielectric. The Yb2TiO5 $\alpha $ -InZnSnO TFT prepared at the 30-W condition exhibited better electrical characteristics in terms of a low threshold voltage of 0.52 V, a high ${I}_{{ \mathrm{\scriptscriptstyle ON}}}/{I}_{{ \mathrm{\scriptscriptstyle OFF}}}$ ratio of $1.1\times 10^{8}$ , a low subthreshold swing of 203 mV/decade, and a large field-effect mobility of 27.9 cm2/Vs. We attribute these results to the optimal Zn and Sn content on InZnSnO channel forming a smooth surface and thus reducing density of interface states at the oxide/channel interface.