Abstract
Zinc tin oxide (ZTO) thin film transistors (TFTs) with back-channel-etch (BCE) structure are demonstrated. The influence of oxygen partial pressure during ZTO layer sputtering is discussed and an optimal O 2 /Ar ratio of 1% is achieved. The effect of annealing temperature is studied and the device annealed at 300°C performs well. The wet etching of Mo source/drain electrodes is carried out in Mo etchant which shows little damage to ZTO layer. The BCE ZTO TFT exhibits a field effect mobility of 1.88 cm2V−1s−1, a subthreshold slope of 0.37V/decade, and an on-off current ratio larger than 107. The comparable performances between BCE ZTO TFT and lift-off ZTO TFT indicate back-channel-etch ZTO TFT is a feasible technique and suitable for mass production.
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