Effect of impurity states on the electronic properties of Delta doped semiconductor quantum well structures in the presence of a magnetic field

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We analyze the effect of impurity electronic states on the properties of a delta doped semiconductor quantum well structure under a magnetic field applied perpendicular to the layers. The quantum well is made up by an odd number N of atomic layers. A donor or acceptor type impurity atomic layer is implanted in the middle of the quantum well. Within the tight binding approximation, we discuss the electronic states in terms of the number of layers and the impurity potential parameter. We show that the conductivity of the delta doped quantum well exhibits oscillatory behavior as the magnetic field increases, because of the presence of localized impurity electronic states.