Abstract
The theory of impurity scattering of electrons in the two-dimensional electron gas in (Al,Ga) As-GaAs modulation doped structures is modified to include the effects of image charges in the neutral doped AlGaAs layer. The effect of the finite width of the electron wave function in the two-dimensional gas is also included. Our model calculation shows that impurity scattering is substantially diminished by the image charges in the doped AlGaAs layer. In samples with large thicknesses of an undoped AlGaAs spacer layer, the mobility of the two-dimensional gas at low temperatures may be limited by compensated ionized impurities in the undoped spacer layer.
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