Abstract
The effect of an undoped GaAs spacer layer at the heterojunction interface of MBE-grown n-Al x Ga 1-x As/p + -GaAs diodes has been investigated by electroluminescence, dynamic secondary ion mass spectrometry and current/voltage measurements. A consistent picture emerges of the role of the spacer layer in accommodating beryllium migration. A simple procedure to optimise the spacer layer thickness is suggested.
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