Abstract
The electroluminescence of vertically emitting Ge-on-Si light emitting diodes (LEDs) was investigated for tensile strain ranging from 0% to 0.24% and for heavy n-type doping ranging from 5×1017cm−3 to 1×1020cm−3. The tensile strain increased the electroluminescence of a Ge-on-Si pin LED by a factor of 2. For high n-type doping concentrations a distinct bandgap narrowing was observed and the electroluminescence at an optimal concentration of 3×1019cm−3 increased by a factor of 5.5 compared to an undoped Ge-on-Si pin LED. In a lateral design the electroluminescence spectrum of the 4×1019cm−3 n-type doped LED shows features of high intensity and narrow linewidth.
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