Abstract
The influence of growth rate on the properties of Ga0.51In0.49P grown by organometallic vapor phase epitaxy (OMVPE) was studied. It was found that surface morphology, band gap energy, and the degree of ordering on the group III sublattice for Ga0.51In0.49P layers grown on GaAs oriented 2–3° off (001) towards [110] were dependent on the growth rate. When the growth rate was decreased from 12 to 4.1 μm/h at a growth temperature of 680°C and a V/III ratio of 150, the surface morphology degraded, the band gap at 300 K decreased 40 meV. The spots due to ordering in the transmission electron diffraction patterns varied from weak wavy streaks at high growth rates to strong round spots at low growth rates, indicative of an increase in the degree of order and the size of the ordered domains. A mechanism of the growth rate effect on the properties of OMVPE-grown GaInP layers is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
