Abstract
Compositional grading in InP/Ga/sub 0.47/In/sub 0.53/As/InP heterostructures was investigated by utilizing the X-ray crystal truncation rod (CTR) scattering measurement. The InP/Ga/sub 0.47/In/sub 0.53/As/InP structures were grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with various growth rates. The results showed that with decrease of the growth rate, the compositional grading increased at hetero-interfaces. The reason why the compositional grading was enhanced when the growth rate was low can be explained by exchange of atoms and/or roughening of the surface while the GaInAs layer was covered slowly at lower growth rates.
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