Abstract
The effects of forming gas anneal on (Ba, Sr)RuO3 and (Ba, Sr)TiO3 films are investigated. Three kinds of samples such as BSR/Si, SiO2/BSR/Si, and SiO2/BSR/BST/BSR/Si were prepared by RF magnetron sputtering technique and forming gas (10% H2+90% N2) anneal was carried out at 400°C for 30 min. The samples having a SiO2 capping layer were employed to examine the effects of forming gas anneal (FGA) on the films under the similar condition to the standard complementary metal oxide semiconductor (CMOS) process. In contrast to the BSR film directly exposed to H2 ambient, the SiO2 capped BSR film was not damaged during H2 annealing. The SiO2 capping turned out to be also effective in preserving the properties of BSR film in BSR/BST/BSR capacitor structure, and the BSR electrode with the use of SiO2 capping layer made it possible to keep the electrical properties of BST films in the capacitor structure within the practical level.
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