Abstract
The tolerance to forming gas anneal of (Ba, Sr)TiO3 with SiO2 capped (Ba, Sr)RuO3 as its electrode was investigated through Auger electron spectroscopy (AES). All the samples were prepared by RF magnetron sputtering technique and forming gas (10% H2 + 90% N2) anneal was carried out at 400°C for 30 min. In measuring AES spectroscopy, the KLL transition of oxygen was used for the criterion of reduction because oxygen showed the most sensitive chemical shift and concentration change during forming gas anneal among the constituent elements. Several kinds of relevant experiments were carried out in order to find out the effects of SiO2 capping. It turned out that the major causes of the tolerance to the forming gas anneal are the blocking capability of SiO2 against the diffusion of H2O that is one of the reduction reaction products and the good properties of interfaces between the (Ba, Sr)RuO3 and the (Ba, Sr)TiO3 originated from the outstanding structural match and chemical compatibility between them.
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