Abstract
We studied the firing temperature dependence of ceramic bulk density, composition and crystal phase in Pb(Co1/3Nb2/3)O3-PbTiO3-PbZrO3 ceramics to clarify the origin of their semiconducting properties. The low resistivity and large dielectric loss of the ceramics were due to B-site vacancies resulting from Co vaporization during firing. An addition of CoO to the stoichiometric ceramic compositions inhibited the vaporization and the production of a pyrochlore phase in the perovskite phase. The A-site vacancies were produced by adding excess Co at higher firing temperatures, whereby the vacancies resulted from the change in Co valence with increasing firing temperature. The dependence of resistivity and dielectric loss in the ceramics on firing temperature was well explained by the compensation between the B-site vacancies and the change in valence of Co (Co2+→Co3+).
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