Abstract

Current-generation screen-printed (SP) Ag pastes have shown capability to contact lightly doped Si solar cell emitters displaying low saturation current density (J 0e ) with high fill factor (FF). However, we have observed that higher firing temperatures are needed to achieve low resistance Ag contact, which may degrade J 0e and result in lower open circuit voltage (V OC ). Higher firing temperatures have also resulted in rear SP Al film blistering. In order to decouple the effects of front and rear contact formation on cell performance, we present data on the impact of SP Ag contacts on n+ phosphorus (P) emitter J 0e for a range of doping densities and firing temperatures. Using a range of Ag coverage areas (A metal ) we extract the J 0e under SP Ag (Joe, me ta i)· We observe that the change in J 0e as a function of A metal (dJ 0 JdA meta j) increases as firing temperature increases, indicating increasing J 0e , metal . Calculated V OC loss at A metal = 7%, a typical coverage for SP Ag contacts, cannot fully account for experimental V OC loss, and Al back surface field (Al-BSF) degradation due to high temperature firing was found to dominate V OC losses.

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