Effect of FIBL in-conjunction with channel parameters on analog and RF FOM of FinFET

Abstract

In this paper, the effect of fringe induced barrier lowering (FIBL) in-conjunction with channel parameters that includes channel thickness (TSi), channel length (Lg) and lateral straggle (σL) on analog and RF performance of FinFET, have been studied using TCAD mixed-mode Sentaurus device simulator. We focused on the variation in analog (intrinsic dc gain) and RF (cut-off frequency) figure of merit (FOM) of high-K gate dielectric based FinFET with respect to channel parameters. It is observed that the variation in intrinsic dc gain (ΔAV) aggravates with TSi scaling. We also observe a mixed response to the ΔAV with respect to variation in Lg and σL, where ΔAV follows an inverse parabolic behavior peaking at an intermediate value of Lg and σL. Variation in cut-off frequency (ΔfT) on the other hand, is negligible (slightly increases with TSi and decreases with Lg and σL). These properties of channel parameters can be handy in designing of high-K gate dielectric based FinFET for analog circuits.