Abstract
Na0.5Bi0.5Ti1−xFexO3−δ (abbreviated as NBTFex, x=0.005, 0.01, 0.02 and 0.04) thin films were deposited on indium tin oxide/glass substrates via a chemical solution deposition method. The influence of Fe2+ doping on the crystallization and electrical properties of Na0.5Bi0.5TiO3 was investigated. All the films crystallize into the single perovskite structure without any secondary phases. The insulating measurement reveals that 2at% Fe2+ doping can effectively reduce the leakage current of Na0.5Bi0.5TiO3 thin film by the formation of defect complexes. The enhanced ferroelectricity is obtained in NBTFe0.02 with a large remanent polarization (Pr) of 20μC/cm2 due to the lowest leakage current and the distortion of TiO6. The normalized capacitance–voltage curves of all films agree with the polarization-electric field hysteresis loops. Also, the relative dielectric constant and dissipation factor of NBTFe0.02 thin film are 450 and 0.094 at 100kHz, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
