Abstract
The effects of Fe3+ ion doping on the structural, ferroelectric and electrical properties of K0.5Bi4.5Ti4O15 (KBTi) thin films were investigated. Pure KBTi and Fe-doped KBTi (KBTFe) thin films were prepared by using a chemical solution deposition method. All thin films were annealed at 750 °C for 3 min by rapid thermal annealing under an oxygen atmosphere for crystallization. The KBTFe thin films exhibited well-defined hysteresis loops, large remanent polarization (48.5 µC/cm2 at an applied electric field of 264 kV/cm) and low leakage current density (8.27 × 10−8 A/cm2 at an applied electric field of 100 kV/cm). The improved ferroelectric and electrical properties of the KBTFe thin films could be explained by the micro-structural change and the formation of defect complex, which minimized the interactions between the chemical defects and the domain walls.
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