Abstract
The electron - impurity binding energy and photoionization cross-section of hydrogenic impurity are studied in spherical multilayered quantum dot AlxGa1-xAs/GaAs/AlyGa1-yAs driven by external electric field. The problem is solved in the framework of the effective mass approximation and rectangular potential profiles for wells and barriers, using the method of wave function expansion over a complete set of functions obtained as exact solutions of Schrodinger equation in nanostructure without impurity and electric field.
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