Laser-dressed binding energy of a hydrogen impurity in the GaAs/AlxGa1 − xAs nanostructure in the presence of a static electric field

Abstract

We set up a calculation for the ground-state binding energy of an on-center hydrogenic impurity in the simultaneous presence of intense high-frequency laser and static electric fields. It is shown that, although the individual external electric fields themselves act in a way to lower the binding energy of the impurity, one might accomplish a reduction of the weakening effects by considering the joint action of the two external fields. In addition, the variations of the binding energy of the impurity versus the laser field related parameter α0are adjusted by the external electric field. The position of the impurity binding energy maximum moves toward the higher values of α0on increasing the static electric field.