Abstract
Dysprosium-substituted bismuth titanate (Bi 3.2 Dy 0.8 Ti 3 O 12 , BDT) thin films were successfully deposited on Pt(111)/Ti/SiO 2 /Si(100) substrates by a sol–gel method. The effects of dysprosium-substitution on the microstructure and ferroelectric properties of Bi 4 Ti 3 O 12 thin films were investigated. X-Ray diffraction analysis reveals that the highly degree of (117) orientation can be obtained for BDT thin films. The improved ferroelectric properties can be attributed to the enhanced degree of (117) orientation of Bi 3.2 Dy 0.8 Ti 3 O 12 thin films. The highly (117)-oriented Bi 3.2 Dy 0.8 Ti 3 O 12 thin films exhibit high remanent polarization (2P r) of 52 μ C/cm 2 and low coercive field (2E c) of 120 kV/cm. The corresponding results show that the obtained Bi 3.2 Dy 0.8 Ti 3 O 12 thin film exhibited excellent ferroelectric properties and, thus, was suitable for application to non-volatile ferroelectric random access memory applications.
Published Version
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