Abstract
Bi 4 − x Y x Ti 3O 12 thin films were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by sol–gel method and rapid thermal annealing. The effects of yttrium-substitution and annealing temperature (500–800 °C) on the microstructure and electrical properties of bismuth titanate thin films were investigated. X-ray diffraction analysis reveals that the degree of (117) orientation increases as the yttrium content increased. The improved ferroelectric properties can be attributed to the enhanced degree of (117) orientation of Bi 4 − x Y x Ti 3O 12 thin films. The highly (117)-oriented Bi 3.2Y 0.8Ti 3O 12 thin films exhibit high remanent polarization (2P r) of 58 μC/cm 2 and low coercive field (2E c) of 116 kV/cm, with fatigue-free characteristics up to > 10 8 switching cycles. The corresponding results show that the obtained Bi 3.2Y 0.8Ti 3O 12 thin film exhibited excellent ferroelectric properties and, thus, was suitable for application to non-volatile ferroelectric random access memory applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
