Abstract
This work investigates the effect of driving frequency on growth and structure of the silicon films deposited by the radio-frequency and very-high-frequency magnetron sputtering. It is found that the silicon films deposited by the 2 MHz and 60 MHz sputtering consist of the small size grains and more crystalline silicon phase, but with a lower growth rate. While the silicon films deposited by the 13.56 MHz and 27.12 MHz sputtering consist of the large size grains and the amorphous phase, but with a higher growth rate. By measuring the plasma parameters at different driving frequency, the crystallinity of the silicon films is found depending on the ions energy, while the growth rate is related to the ions flux. Therefore, the growth and structures of the silicon films can be effectively controlled by adjusting the ions energy and ions flux using different driving frequency.
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