Effect of doping gas on HFCVD diamond thin films deposited on cemented carbide substrates

Abstract

Herein, coating diamonds on WC–Co by using the hot filament chemical vapor deposition (HFCVD) method are discussed. CVD was performed for 8 h under a deposition pressure of 40 torr using various doping gases such as boron, nitrogen, and argon to control the particle size of the diamond thin films, the surface was then analyzed through scanning electron microscopy (SEM) and Raman spectroscopy. The SEM images confirmed that the diamond crystal size was reduced upon boron and argon doping. In contrast, nitrogen doping promoted the growth of diamond crystals. In the Raman spectra, the D and G bands were observed at 1332 and 1580 cm[Formula: see text], respectively. Thus, the surface roughness can be controlled using a variety of doping gases, which may be used in tools.