Effect of doping concentration of substrate silicon on retention characteristics in metal-ferroelectric-insulator-semiconductor capacitors

Abstract

The polarization retention characteristics in metal-ferroelectric-insulator-semiconductor (MFIS) capacitor was theoretically investigated by considering depolarization field based on Lou’s polarization retention model [J. Appl. Phys. 105(9), 094107 (2009)]. The derived results demonstrated that the retention property can be effectively improved by enhancing the doping concentration of substrate silicon. Additionally, it is better to keep the MFIS capacitor at accumulation and depletion regions than at inversion region for improving the polarization retention property. It is expected that this investigation may offer some useful guidelines to the design and retention property improvement of MFIS capacitor and other MFIS structure devices.