Abstract
MFIS (Metal Ferroelectric Insulator Semiconductor) capacitors were fabricated on Si(100) substrate using CeO2 as the insulating buffer layer, SrBi2Ta2O9(SBT) as the ferroelectric layer, and Pt as the top electrode material. XRD(T) analysis was used to examine the phase transition from the as-deposited, amorphous to the polycrystalline phase of the SBT layer as a function of the anneal temperature. The influence of the anneal temperature on the capacitance of MIS/MFIS structures and the memory window of MFIS capacitors will be discussed. To investigate the effect of interdiffusion between SBT and CeO2, which can occur during the anneal process, Ce solution was added to the SBT solution before deposition. Pt/SBT/Pt and Pt/SBT(Ce)/Pt capacitors fabricated with this solution were characterized.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
