Abstract
Two-dimensional materials have attracted great attention because of their ultra-thin atomic layer thickness and high carrier mobility. In this work, we investigated the electronic transport of in-plane (IP) heterojunction based on Cu/Blue Phosphorus (BlueP), and the results suggest the metallization at the IP Cu/BlueP contact interface and a small Schottky barrier. Then, we investigated the performance of 5.1 nm IP BlueP Schottky barrier field-effect transistors (SBFET) with different dielectrics (SiO2, Al2O3, Y2O3, and La2O3) using quantum transport simulations. The results show that IP BlueP SBFETs with four dielectrics satisfy the off-state requirement of the International Technology Roadmap for Semiconductors (ITRS) for the high-performance (HP) device. However, the on-state current of only IP BlueP SBFET with La2O3 satisfies the requirements of ITRS. This will provide a reference for designing BlueP SBFETs.
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