Effect of different capacitance matching on negative capacitance FDSOI transistors

Abstract

Negative capacitance field-effect transistors (NCFETs) have several advantages over traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) and are considered to be promising technology for the next generation of integrated circuits nodes. In this study, an NCFET based on fully depleted silicon-on-insulator (FDSOI) technology is investigated using technology computer-aided design (TCAD) simulation. The effects of capacitance matching due to ferroelectric material parameters (coercive field Ec, remnant polarization Pr) on NCFET are discussed in detail. The simulation results show that good NCFET capacitance matching is closely related to the Pr to Ec ratio (RPE), a metric that is defined for the first time. In addition, it is observed that NCFETs with a two-layer ferroelectric structure can effectively adopt the capacitance matching in different operation regions, thereby increasing the on-state current and reducing the off-state current, resulting in higher switching current ratio (ION/IOFF) than the single-layer counterpart.