Performance Evaluation of LiNbO3-based Negative Capacitance Field Effect Transistors (NCFETs)

Abstract

This article provides a current voltage model for a ferroelectric material made of Lithium Niobate (LiNbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> ) used in a negative capacitance field-effect transistor (NCFET). The influence of various device dimensions like doping concentrations, ferroelectric thicknesses on device parameters such as potential and IV characteristics has been described. SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is incorporated as the dielectric. Sentaurus Technology Computer Aided Design (TCAD) is used to examine the device. In addition, the effects of ferroelectric thickness and channel doping concentration on NCFET device simulation and the hysteresis window are thoroughly investigated. For enhanced polarization switching, NCFETs use a ferroelectric layer. For voltage amplification, a Lithium Niobate (LiNbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> ) layer is used within the transistor's gate. This paper proposes an I-V model for NCFETs using LiNbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> as the ferroelectric material, as well as the polarization values produced from it. The sub-threshold swing was attained at about 45 mV/dec for a low ferroelectric thickness of 10 nm, along with improved hysteresis behavior. The device's current drive and threshold voltage have also been significantly improved, demonstrating that it is a suitable material for low-power applications.