Abstract
The increase of the MOS integration scale entails the presence of the strong electrical fields in the MOS channel transistor, which cause the injection of hot carriers in the gate oxide and create defects at the Si/SiO 2 interface and in the oxide layer. These defects induce leakage currents and are responsible for degradation of circuit performances and transistor ageing. The aim of this work is to investigate the influence of defects localised in the oxide near the drain of an NMOS transistor in saturation mode on the variation of substrate and drain currents as a function of gate voltage.
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