Abstract
Abstract Homoepitaxial growth was conducted on on-axis and 4° off-axis 4H-SiC (0 0 0 1) Si-face substrate by using our home-made vertical hot wall LPCVD reactor. The purpose of the present study is to investigate the influence mechanism of C/Si ratio on the crystal quality, the growth rate and surface morphology. It was found that the growth rate increased with the increase of C/Si ratio. The optical window of C/Si ratio for growth on 4° off-axis substrates is bigger than on-axis substrates. The results demonstrate that C/Si ratio is a critical process parameter to be optimized to obtain high-quality 4H-SiC thick epitaxial layers.
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