Abstract
An attempt is made to study the effect of crystal-field splitting on the Einstein relation for the diffusivity-mobility ratio of the carriers in ternary chalcopyrite semiconductors, taking degenerate n-CdGeAs2 as an example. It is found on the basis of Kildal model, that the above ratio increases with increasing carrier concentration is expected for degenerate semiconductors, it is also shown that the crystal-field splitting parameter effectively reduces the ratio with increasing amount of reduction with increasing carrier concentration. Besides, the corresponding results for parabolic semiconductors are also obtained from the expressions derived.
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