Abstract
Ferroelectric Bi3.25La0.75Ti3O12 (BLT) films were grown on Pt∕Ti∕SiO2∕Si (Pt∕Si), LaNiO3∕Pt∕Si, and LaNiO3∕Si substrates using chemical solution deposition technique. X-ray diffraction analysis shows that films grown on conductive LaNiO3 electrodes had higher degree of (117) orientation as compared to that grown directly on Pt∕Si substrate. High remanent polarization value (2Pr)∼43.14μC∕cm2 (Ec of 111kV∕cm) under an applied field of 396kV∕cm was obtained for BLT film on LaNiO3∕Pt∕Si as compared to a value of 26μC∕cm2 obtained for BLT film on Pt/Si directly. There was no degradation in the switchable polarization (Psw−Pns) after 1010 switching cycles.
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