Abstract
AbstractWe report on the bonding environment of In in InxAl1–xN (0.07 < x < 0.25) and InyGa1–yN (0.7 < y < 1) epilayers using extended X‐ray absorption fine structure (EXAFS) spectroscopy. The EXAFS analysis reveals that the In–N distance, in both the InAlN and the InGaN ternaries, is only weakly dependent on the In content. Contrary to that, the In–cation distances (in the 2nd nearest neighbour shell) have values closer to those predicted by Vegard's law. More specifically, the distribution of the In–cation distances is bimodal with the ff In–Ga and In–Al distances being smaller than the In–In distance. The variation of the In–Ga and In–Al distances with the In content is in agreement with Vegard's law while the In–In distance deviates from the expected values for In fractions smaller than 0.7. The identified composition‐dependent variation of the In–N and In–cation distances, indicates that the alloying induced stress in InAlN and InGaN is mainly accommodated by bond angle variation rather than bond length deformation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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