Abstract
The influence of chemical etching on the photoreflectance (PR) spectra of semi-insulating (SI) GaAs has been investigated. Different PR spectra were obtained after chemical treatment in alkaline and acid solutions, respectively. Different chemical compositions on the sample surface were measured. An oxide film was formed only on the surface of the sample etched in an alkaline solution. The role of the film interference effect in the PR spectra is discussed. Details of the chemical processes of etching are given, and the surface polarization conditions are discussed.
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