Abstract
The stress-induced behavior of E 0 photoreflectance (PR) spectra of strained III-V epilayers in n-GaAs/Si and n-InP/Si heterostructures is studied. Expected effects of residual biaxial layer stresses on spectral shape and energetic position of the E 0 PR features are simulated by model calculations for medium-field as well as low-field PR spectra. Experimental PR spectra are analyzed with the aid of quantitative lineshape fitting. The full fitting analysis reveals energetically shifted heavy hole (hh) transitions as dominant spectral constituent in the stress-induced PR spectra and provides reliable values E 0 hh of hh transition energies under strain. The shift of E 0 hh is used to evaluate the value of the layer stress σ∥.
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