Abstract
Low temperature optical transmission spectra (TS) and room temperature photoreflectance (PR) spectra have been measured to investigate several In xGa 1− x AS GaAs strained multiple quantum wells (MQWs) grown by molecular beam epitaxy (MBE). Sharp PR features indicating excellent optical quality of these samples were observed. The excitonic transitions up to 3C-3H are observed. The notation nC-mH(L) is used to indicate the transitions related to the n-th conduction and m-th valence heavy (light) hole subbands. The band-to-band transitions are also observed in both TS and PR spectra, which, having step-like structure in TS spectra, are identified as 1C-1L transitions. The calculated transition energies, taking into account both the strain and the quantum well effects, are in good agreement with the TS and PR spectra. This shows that room temperature PR is a powerful and convenient tool to investigate the strained layer MQWs. By fitting the experimental results (TS and PR), a heavy-hole valence band discontinuity of 30% was obtained for 0.13 ≤ × ≤ 0.193. We conclude that the light holes are in the GaAs barrier region (Type II MQWs) and the light hole transition 1C-1L is a sensitive parameter in determining the band offset in GaAs GaAs strained layer MQWs.
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